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Numéro de référence | MA122 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
Switching Diodes
MA6X122
Silicon epitaxial planar type
For switching circuit
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward current*1
Peak forward current*1
Non-repetitive peak forward
surge current*1,2
VR
VRM
IF
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Tj
Tstg
150
−55 to +150
Unit
V
V
mA
mA
mA
°C
°C
0.65 ± 0.15
6
5
4
2.8
+ 0.2
− 0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
1
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1 4 : Cathode 3
2 : Cathode 2 5 : Cathode 4
3 : Anode 3,4 6 : Anode 1,2
Mini Type Package (6-pin)
Marking Symbol: M2A
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
100
1.2
80
15
10
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
V
V
pF
ns
1
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Pages | Pages 2 | ||
Télécharger | [ MA122 ] |
No | Description détaillée | Fabricant |
MA120 | Diode (spec sheet) | American Microsemiconductor |
MA121 | Silicon epitaxial planar type | Panasonic |
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