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Numéro de référence | MH16S64FFB-10 | ||
Description | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM | ||
Fabricant | Mitsubishi | ||
Logo | |||
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16S64FFB -10,-10L
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH16S64FFB is 16777216 - word by 64-bit
Synchronous DRAM module. This consists of eight
industry standard 16Mx8 Synchronous DRAMs in
TSOP and one industory standard EEPROM in
TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
Frequency
-10,10L 100MHz
CLK Access Time
(Component SDRAM)
8.0ns(CL=3)
Utilizes industry standard 16M x 8 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
144-pin (72-pin dual in-line package)
single 3.3V±0.3V power supply
Clock frequency 100MHz(max.)
Fully synchronous operation referenced to clock rising
edge
4 bank operation controlled by BA0,1(Bank Address)
/CAS latency- 2/3(programmable)
Burst length- 1/2/4/8/Full Page(programmable)
Burst type- sequential / interleave(programmable)
Column access - random
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycle /64ms
LVTTL Interface
APPLICATION
main memory or graphic memory in computer systems
PCB Outline
(Front)
(Back)
1
2
MIT-DS-0280-0.1
MITSUBISHI
ELECTRIC
( 1 / 55 )
143
144
15. Jan.1999
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Pages | Pages 30 | ||
Télécharger | [ MH16S64FFB-10 ] |
No | Description détaillée | Fabricant |
MH16S64FFB-10 | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM | Mitsubishi |
MH16S64FFB-10L | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM | Mitsubishi |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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