DataSheetWiki


MG100J2YS50 fiches techniques PDF

Toshiba - N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)

Numéro de référence MG100J2YS50
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





MG100J2YS50 fiche technique
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J2YS50
High Power Switching Applications
Motor Control Applications
MG100J2YS50
Unit: mm
l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
l Low saturation voltage
: VCE (sat)=2.70V (Max) (IC=100A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation (Tc=25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
JEDEC
EIAJ
TOSHIBA
Weight: 202g (Typ.)
Rating
600
±20
100
200
100
200
450
150
40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
2-94D1A
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-02-22 1/5

PagesPages 5
Télécharger [ MG100J2YS50 ]


Fiche technique recommandé

No Description détaillée Fabricant
MG100J2YS50 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche