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What is MG1200V1US51?

This electronic component, produced by the manufacturer "Toshiba", performs the same function as "TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT".


MG1200V1US51 Datasheet PDF - Toshiba

Part Number MG1200V1US51
Description TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturers Toshiba 
Logo Toshiba Logo 


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Total 4 Pages



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MG1200V1US51
TOSHIBA GTR MODULE SILICON NCHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
FEATURES
l High Input Impedance
l Enhancement Mode
l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS
CollectorEmitter Voltage
GateEmitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
Terminal: M4/M8
Mounting
SYMBOL
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
RATING
1700
20
1200
2400
1200
2400
5560
20~125
40~125
5400
(AC 1min)
2/7
4
UNIT
V
V
A
A
W
°C
°C
V
N·m
1
2001-06-26


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MG1200V1US51 electronic component.


Information Total 4 Pages
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Download [ MG1200V1US51.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
MG1200V1US51The function is TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT. ToshibaToshiba

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