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MG150Q2YS51 fiches techniques PDF

Toshiba - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

Numéro de référence MG150Q2YS51
Description N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Fabricant Toshiba 
Logo Toshiba 





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MG150Q2YS51 fiche technique
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS51
MG150Q2YS51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive Load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
(25°C / 80°C)
ICP
(25°C / 80°C)
IF
IFM
PC
Tj
Tstg
VIsol
Rating
1200
±20
200 / 150
400 / 300
150
300
1250
150
40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
2-109C4A
1 2001-04-16

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