|
|
Numéro de référence | MG150Q2YS51 | ||
Description | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS51
MG150Q2YS51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive Load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
(25°C / 80°C)
ICP
(25°C / 80°C)
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
1200
±20
200 / 150
400 / 300
150
300
1250
150
−40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
―
―
2-109C4A
1 2001-04-16
|
|||
Pages | Pages 7 | ||
Télécharger | [ MG150Q2YS51 ] |
No | Description détaillée | Fabricant |
MG150Q2YS50 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
MG150Q2YS51 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |