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PDF 7MBP25RA120 Data sheet ( Hoja de datos )
| Número de pieza | 7MBP25RA120 | |
| Descripción | IGBT-IPM(1200V/25A) | |
| Fabricantes | Fuji Electric | |
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7MBP25RA120
IGBT-IPM R series
1200V / 25A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
DB Collector current
DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
VR
IC
ICP
-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Unit
Min. Max.
0 900 V
0 1000 V
200 800 V
0 1200 V
- 1200 V
- 25 A
- 50 A
- 25 A
- 198 W
- 15 A
- 30 A
- 15 A
- 120 W
- 150 °C
0 20 V
0 Vz V
- 1 mA
0 Vcc V
- 15 mA
-40 125 °C
-20 100 °C
- AC2.5 kV
- 3.5 *6 N·m
- 3.5 *6 N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Fig.1 Measurement of case temperature
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
DB
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Condition
Min. Typ. Max.
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=1200V input terminal open
Ic=25A
-Ic=25A
VCE=1200V input terminal open
Ic=15A
-Ic=15A
Unit
–
–
–
–
–
–
–
–
–
–
–
–
1.0 mA
2.6 V
3.0 V
1.0 mA
2.6 V
3.0 V
1 page  
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7MBP25RA120
Inverter
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=25°C
40 Vcc=15V
Vcc=17V
35
Vcc=13V
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V)
10000
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C
1000
toff
ton
100 tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
40 Vcc=15V
35 Vcc=17V
30 Vcc=13V
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V)
10000
1000
100
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
toff
ton
tf
10
0
5 10 15 20 25 30 35 40
Collector current : Ic (A)
Forward current vs. Forward voltage
40
35
125°C
25°C
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Forward voltage : Vf (V)
10
0
5 10 15 20 25 30 35 40
Collector current : Ic (A)
Reverse recovery characteristics
trr,Irr vs. IF
1000
trr125°C
trr25°C
100
Irr125°C
10
Irr25°C
1
0 5 10 15 20 25 30 35 40
Forward current : IF(A)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 7MBP25RA120.PDF ] | |
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