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PDF MJ802 Data sheet ( Hoja de datos )
| Número de pieza | MJ802 | |
| Descripción | High-Power NPN Silicon Transistor | |
| Fabricantes | ON | |
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MJ802
High−Power NPN Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
Features
• High DC Current Gain − hFE = 25−100 @ IC = 7.5 A
• Excellent Safe Operating Area
• Complement to the PNP MJ4502
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Symbol
VCER
VCB
VCEO
VEB
IC
IB
PD
Value
100
100
90
4.0
30
7.5
200
1.14
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS − 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ802G
AYYWW
MEX
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1
MJ802
G
A
YY
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ802
TO−204
100 Units / Tray
MJ802G
TO−204
(Pb−Free)
100 Units / Tray
Publication Order Number:
MJ802/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJ802.PDF ] | |
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