PDF MJE13005 Data sheet ( Hoja de datos )

Número de pieza	MJE13005
Descripción	4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13005/D MJE13005* ™Designer's Data Sheet Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Symbol RθJA RθJC TL CASE 221A–06 TO–220AB Value 400 700 9 4 8 2 4 6 12 2 16 75 600 – 65 to + 150 Unit Vdc Vdc Vdc Adc Adc Adc Watts mW/_C Watts mW/_C _C Max Unit 62.5 _C/W 1.67 _C/W 275 _C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 3 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 5V PW DUTY CYCLE ≤ 10% tr, tf ≤ 10 ns 68 +5 V 0.001 µF 1N4933 33 MJE210 33 1N4933 2N2222 1k RB 1k +5 V IB VCC L IC 1N4933 NOTE 0.02 µF 270 PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 1k 2N2905 47 100 1/2 W T.U.T. MJE200 – VBE(off) MR826 Vclamp *SELECTED FOR ≥ 1 kV 5.1 k VCE 51 Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 GAP for 200 µH/20 A Lcoil = 200 µH OUTPUT WAVEFORMS IC IC(pk) tf CLAMPED tf UNCLAMPED ≈ t2 t1 tf t VCE VCE or Vclamp TIME t2 t t1 ADJUSTED TO OBTAIN IC t1 ≈ Lcoil (ICpk) VCC t2 ≈ Lcoil (ICpk) Vclamp VCC = 20 V Vclamp = 300 Vdc Test Equipment Scope–Tektronics 475 or Equivalent MJE13005 RESISTIVE SWITCHING +125 V RC TUT RB SCOPE D1 – 4.0 V VCC = 125 V RC = 62 Ω D1 = 1N5820 or Equiv. RB = 22 Ω +10 V 25 µs 0 –8 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 ZθJC(t) = r(t) RθJC RθJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 2 5 10 20 t, TIME (ms) 50 100 200 500 Figure 10. Typical Thermal Response [ZθJC(t)] 1k Motorola Bipolar Power Transistor Device Data 5 5 Page

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PDF Descargar	[ Datasheet MJE13005.PDF ]

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