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MJE13005 fiches techniques PDF

ON - NPN SILICON POWER TRANSISTOR

Numéro de référence MJE13005
Description NPN SILICON POWER TRANSISTOR
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MJE13005 fiche technique
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MJE13005
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A,
100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Value
400
700
9
4
8
2
4
6
12
2
16
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD 75 W
600 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Thermal Resistance, Junction−to−Case
RqJC
1.67 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 5 Seconds
TL
275 _C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
1
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
123
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
MJE13005G
AY WW
A = Assembly
Location
Y = Year
WW = Work Week
G = Pb−Free Pack-
age
ORDERING INFORMATION
Device
Package
Shipping
MJE13005
TO−220
50 Units / Rail
MJE13005G
TO−220
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE13005/D

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