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PDF MJE13007 Data sheet ( Hoja de datos )
| Número de pieza | MJE13007 | |
| Descripción | POWER TRANSISTOR | |
| Fabricantes | ON | |
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 1. 80W NPN - On semi  Hay una vista previa y un enlace de descarga de MJE13007 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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ON Semiconductort
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007 is designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V switchmode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and
Deflection circuits.
• VCEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ TC = 100°C
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Standard TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE13007
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
400 Vdc
700 Vdc
9.0 Vdc
8.0 Adc
16
4.0 Adc
8.0
12 Adc
24
80 Watts
0.64 W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5
Seconds
TL
260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8•lbs.
MJE13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80 WATTS
CASE 221A–09
TO–220AB
MJE13007
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3
1
Publication Order Number:
MJE13007/D
1 page  
MJE13007
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (VCEV), this is the recommended
and specified use condition. Maximum ICEV at rated VCEV
is specified at a relatively low reverse bias (1.5 Volts) both
at 25°C and 100°C. Increasing the reverse bias will give
some improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn–on and turn–off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn–on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage–current conditions that
can be sustained during reverse biased turn–off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
(1) ON Semiconductor Application Note AN719, AN873, AN875,
AN951.
http://onsemi.com
5
5 Page 
Notes
MJE13007
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MJE13007.PDF ] | |
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