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Número de pieza | MM018-06L | |
Descripción | 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MM018-06L (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM118-XX
Features
SERIES
• Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
600 / 1200 Volts
• Compact and rugged construction offering weight and space savings
• Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T”suffix to part number, see option below)
• HPM (Hermetic Power Module)
• Isolation voltage capability (in reference to the base) in excess of 3kV
• Very low thermal resistance
• Thermally matched construction provides excellent temperature and
power cycling capability
• Additional voltage ratings or terminations available upon request
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
Maximum Ratings per switch @ 25°C (unless otherwise specified)
PART NUMBER
SYMBOL
MM118-06 MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ Tj≥ 25°C
Collector-to-Gate Breakdown Voltage @ Tj≥ 25°C, RGS= 1
MΩ
Gate-to-Emitter Voltage
continuous
transient
Continuous Collector Current
25°C
Tj=
Tj= 90°C
Peak Collector Current, pulsewidth limited by Tj max
Power Dissipation
Thermal resistance, junction to base
per switch
BVCES
600 V
1200 V
BVCGR
600 V
1200 V
VGES
VGEM
IC25
IC90
+/- 20 V
+/- 30 V
60 A
32 A
+/- 20 V
+/- 30 V
52 A
33 A
ICM
PD
RΘ jc, max
RΘ , typ
120 A
165 W
104 A
165 W
0.75°C/W
0.5°C/W
0.75°C/W
0.5°C/W
Mechanical Outline
Datasheet# MSC0321A
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MM018-06L.PDF ] |
Número de pieza | Descripción | Fabricantes |
MM018-06L | 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE | Microsemi |
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