DataSheetWiki


NGA-589 fiches techniques PDF

ETC - DC-5.5 GHZ / CASCADABLE INGAP/GAAS HBT MMIC AMPLIFIER

Numéro de référence NGA-589
Description DC-5.5 GHZ / CASCADABLE INGAP/GAAS HBT MMIC AMPLIFIER
Fabricant ETC 
Logo ETC 





1 Page

No Preview Available !





NGA-589 fiche technique
Product Description
Sirenza Microdevices’ NGA-589 is a high performance InGaP/
GaAs HBT MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance
up to 5.5 GHz with excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. At 850 Mhz and 80mA , the NGA-
589 typically provides +39 dBm output IP3, 20 dB of gain, and
+19 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
24 0
GAIN
18 -10
IRL
12
ORL
-20
6 -30
0 -40
0123456
Frequency (GHz)
NGA-589
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• High Gain : 19.2 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
18.0 20.0 22.0
dB 1950 MHz
19.2
2400 MHz
18.9
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
19.0
18.8
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
39.0
34.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5500
IRL Input Return Loss
dB 1950 MHz
15.5
ORL Output Return Loss
dB 1950 MHz
18.0
NF Noise Figure
dB 1950 MHz
3.7
VD Device Operating Voltage
V
4.5 4.9
5.3
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
°C/W
111
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100376 Rev C

PagesPages 5
Télécharger [ NGA-589 ]


Fiche technique recommandé

No Description détaillée Fabricant
NGA-586 DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER Sirenza Microdevices
Sirenza Microdevices
NGA-589 DC-5.5 GHZ / CASCADABLE INGAP/GAAS HBT MMIC AMPLIFIER ETC
ETC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche