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PDF NGA-689 Data sheet ( Hoja de datos )
| Número de pieza | NGA-689 | |
| Descripción | DC-5000 MHz / Cascadable GaAs HBT MMIC Amplifier | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NGA-689 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Product Description
Stanford Microdevices NGA-689 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.
Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products.
PPrerelilmimininaaryry
NGA-689
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
16
14
12
10
8
6
0
Small Signal Gain vs. Frequency
246
Frequency GHz
8
Product Features
11.7dB Gain, 18.9 dBm P1dB at 1950Mhz
Cascadable 50 ohm: 1.4:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 80 mA, T = 25ºC
P1dB
Output Power at 1dB Compression
IP3
Third Order Intercept Point
Power out per tone = 0 dBm
S21 Small Signal Gain
Bandwidth
S11
S22
Determined by S11 and S22 values
Input VSWR
Output VSWR
S12 Reverse Isolation
NF
VD
Rth, j-l
Noise Figure
Device Voltage
Thermal Resistance (junction - lead)
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = DC - 5000 MHz
f = DC - 5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 2000 MHz
Units
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
-
-
dB
dB
dB
dB
V
ºC/W
Min.
Typ.
19.9
18.9
17.9
36.9
33.6
32.1
11.9
11.7
11.6
5000
1.4:1
1.4:1
19.7
19.5
19.4
6.0
5.8
91
Max.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1 EDS-101442 Rev A
1 page  
PPrerelilmimininaaryry
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
13.0
12.5
12.0
11.5
11.0
10.5
0.5
S21 vs. Bias, T = 25ºC
60mA
80mA
100mA
1.5 2.5
GHz
3.5
45
40
35
30
25
20
0.5
IP3 vs. Bias, T = 25ºC
60mA
80mA
100mA
1.5 2.5
GHz
3.5
25
20
15
10
5
0
0.5
P1dB vs. Bias, T = 25ºC
60mA
80mA
100mA
1.5 2.5
GHz
13.0
S21 vs. Temperature, ID = 80mA
12.5
12.0
11.5
11.0
10.5
25C
-40C
85C
3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5
GHz
45
40
35
30
25
20
0.5
IP3 vs. Temperature, ID = 80mA
25C
-40C
85C
1.0 1.5 2.0 2.5 3.0
GHz
3.5
25
20
15
10
5
0
0.5
P1dB vs. Temperature, ID = 80mA
25C
-40C
85C
1.0 1.5 2.0 2.5
GHz
3.0
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101442 Rev A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NGA-689.PDF ] | |
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