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Número de pieza | NJG1106KB2 | |
Descripción | 800MHz BAND LNA GaAs MMIC | |
Fabricantes | New Japan Radio | |
Logotipo | ||
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No Preview Available ! NJG1106KB2
800MHz BAND LNA GaAs MMIC
nGENERAL DESCRIPTION
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and
low current consumption of 3mA at low supply voltage
of 2.7V.
NJG1106KB2 includes internal self-bias circuit and
input DC blocking capacitor in a ultra small and ultra
thin package of FLP6-B2.
nPACKAGE OUTLINE
NJG1106KB2
nFEATURES
lLow voltage operation
lLow current consumption
lSmall signal gain
lLow noise figure
lHigh Input IP3
lHigh Output IP3
lUltra small & ultra thin package
+2.7V typ.
2.5mA typ.
17dB typ. @f=820MHz
1.3dB typ. @f=820MHz
-4dBm typ. @f=820.0+820.1MHz
+13dBm typ. @f=820+820.1MHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
nPIN CONFIGURATION
KB2 Type
(Top View)
4
5
AMP
PIN CONNECTION
3 1.RFout
2.GND
3.EXTCAP
4.GND
2 5.GND
6.RFin
61
Package orientation mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1-
1 page nTYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. VDD
Freq=820MHz,Ta=25oC
18.0
2.0
17.8
17.6
Gain
1.8
1.6
17.4
17.2
NF
1.4
1.2
17.0 1.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. VDD
Freq=820+820.1MHz, Ta=25oC
20 0
IIP3
18
-2
16
OIP3
14
-4
-6
12 -8
10 -10
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NJG1106KB2
NJG1106KB2 IDD vs. VDD
Freq=820MHz,Ta=25oC
3.2
3.1
3.0
2.9
2.8
2.7
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. Freq
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25 oC
20 0
18 -2
16
IIP3
14
OIP3
12
-4
-6
-8
10 -10
800 820 840 860 880 900
freq (MHz)
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
-5-
5 Page nPACKAGE OUTLINE (FLP6-B2)
NJG1106KB2
2.0±0.1
654
0.75±0.05
+0.1
0.15- 0.05
123
0.65
0.65
+0.1
0.2-0.05
Lead material
Lead surface finish
Molding material
UNIT
Weight
: Copper
: Solder plating
: Epoxy resin
: mm
: 6.5mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
- 11 -
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet NJG1106KB2.PDF ] |
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