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Fairchild - High Conductance Low Leakage Diode

Numéro de référence MMBD1503
Description High Conductance Low Leakage Diode
Fabricant Fairchild 
Logo Fairchild 





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MMBD1503 fiche technique
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
SOT-23
3
11
12
2 MARKING
MMBD1501 11 MMBD1501A A11
1 MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
CONNECTION DIAGRAMS
1501 3
3 1503
1
1504
2 NC
3
12
3 1505
121 2
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV Working Inverse Voltage
180
IO Average Rectified Current
200
IF DC Forward Current
600
if
if(surge)
Tstg
TJ
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD1501/A/ 1503-1505/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation

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