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Diodes Incorporated - NPN SURFACE MOUNT VHF/UHF TRANSISTOR

Numéro de référence MMBTH24
Description NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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MMBTH24 fiche technique
MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
BE
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
40
40
4.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Max Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
V(BR)CEO
40
V IC = 1mA, IB = 0
V(BR)CBO
40
V IC = 100μA, IE = 0
V(BR)EBO 4.0
V IE = 10μA, IC = 0
ICBO 100 nA VCB = 30V, IE = 0
IEBO 100 nA VEB = 2V, IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
hFE
VCE(SAT)
VBE(SAT)
30
0.5
0.95
IC = 8mA, VCE = 10.0V
V IC = 4mA, IB = 400μA
V IC = 4mA, VCE = 10.0V
Current Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitance
Collector-Base Time Constant
fT
CCB
CRB
Rb’Cc
400
0.7
0.65
9
MHz
pF
pF
ps
VCE = 10V, f = 100MHz, IC = 8mA
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, f = 1.0MHz, IE = 0
IC = 4mA, VCB = 10V, f = 31.8MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS31034 Rev. 13 - 2
1 of 3
www.diodes.com
MMBTH24
© Diodes Incorporated

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