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PDF MMBTH81LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTH81LT1 | |
| Descripción | UHF/VHF Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTH81LT1/D
UHF/VHF Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBTH81LT1
Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
DEVICE MARKING
VCEO
VCBO
VEBO
–20
–20
–3.0
Vdc
Vdc
Vdc
MMBTH81LT1 = 3D
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IE = 0)
Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–20
–20
–3.0
—
—
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc)
Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
60
—
—
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT 600
Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz)
Ccb —
Cce —
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–100
nAdc
—
–100
nAdc
———
— –0.5 Vdc
— –0.9 Vdc
— — MHz
— 0.85 pF
— 0.65 pF
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBTH81LT1.PDF ] | |
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