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PDF MMSF7P03HD Data sheet ( Hoja de datos )
| Número de pieza | MMSF7P03HD | |
| Descripción | SINGLE TMOS POWER MOSFET 30 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF7P03HD/D
™Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
Single HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process.
HDTMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
G
MMSF7P03HD
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 mW
™
D
S
CASE 751–05, Style 13
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Source Current — Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
W(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
30
± 20
7.0
50
2.3
2.5
– 55 to 150
5000
Vdc
Vdc
Adc
Apk
Adc
Watts
°C
mJ
RθJA
T
50 °C/W
260 °C
DEVICE MARKING
S7P03
(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF7P03HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1
1 page  
7.0
QT
6.0
30
5.0
Q1
4.0
Q2
VGS 20
3.0
2.0
1.0
Q3
0
0 5.0
10
TJ = 25°C
ID = 7.0 A
VDS 0
10 15 20 25 30 35 40
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
1000
TJ = 25°C
ID = 7.0 A
VDD = 15 V
VGS = 10 V
100
10
MMSF7P03HD
td(off)
tf
tr
td(on)
1.0
1.0
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
6.0
5.0
TJ = 25°C
4.0 VGS = 0 V
3.0
2.0
1.0
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.95
Figure 10. Diode Forward Voltage versus
Current
Motorola TMOS Power MOSFET Transistor Device Data
5
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