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Número de pieza | PN163NC | |
Descripción | Silicon NPN Phototransistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PN163NC (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Phototransistors
PN163NC
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : tr = 4 µs (typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
IC
PC
Topr
Tstg
20
20
50
–25 to +85
–30 to +100
Unit
V
mA
mW
˚C
˚C
3.0±0.3
Unit : mm
1.95±0.25
ø1.1 0.9
R0.5
1.4±0.2
0.5
2-0.5±0.15
0.3±0.15
21
2.54
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO
Sensitivity to infrared emitters SIR*1
VCE = 10V
VCE = 10V, H = 15µW/cm2
0.2 µA
6 40 µA
Peak sensitivity wavelength λP VCE = 10V
850 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
25
deg.
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100Ω
ICE(L) = 3µA, H = 15µW/cm2
4 µs
4 µs
0.5 V
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Switching time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PN163NC.PDF ] |
Número de pieza | Descripción | Fabricantes |
PN163NC | Silicon NPN Phototransistor | Panasonic Semiconductor |
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