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PDF PN168 Data sheet ( Hoja de datos )
| Número de pieza | PN168 | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
30
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.8
Response time
Collector saturation voltage
tr, tf*2
VCE(sat)
VCC = 10V, ICE(L) = 1mA, RL = 100Ω
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.005
3
800
35
4
0.2
max
0.5
0.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PN168.PDF ] | |
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