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Numéro de référence | NE02107 | ||
Description | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
Fabricant | ETC | ||
Logo | |||
1 Page
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
b e r sNEC's NE021 series of NPN silicon transistors provides eco-
P L E A S E N O T E : p a r t n u mnomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
T h e f o l l o wdi nagt a s h e e t a r eintermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
f r o m t h i s o t i v e :tions.
n o n p rNoEm0 2 1 0 0NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
N E 0 2 1 3 3 b e r sFREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
N E 0 2 1 3 9 p a r t n u mVCE = 10 V, IC = 5 mA
T h e f o l l o wdi nagt a s h e e t a r e500 1.2 18.60 .36 69 .14
1000
1.5 13.82 .31 124 .12
1500
2.0 11.83 .50 165 .05
2000
2.4
9.36 .44
-175
.06
2500
2.6
7.82 .52
-161
.10
t h i s3000
3.6
7.51 .68
-141
.14
fdr oi smc o n t i n u e d :3500
3.7
6.31 .71
-139
.21
VCE = 10 V, IC = 20 mA
N E 0 2 1 0 7 f o r500 1.8 21.32 .16 149 .15
N E 0 2 1 3 5 office1000
1.9 16.15 .33 169 .13
1500
2.4 13.50 .46
-179
.09
c a l l s a l e s2000
2.9 11.02 .53
-167
.08
2500
3.2
9.12 .57
-154
.14
3000
3.9
8.10 .62
-139
.27
dPelet aasi les .3500
4.3
6.48 .67
-134
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
California Eastern Laboratories
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Pages | Pages 12 | ||
Télécharger | [ NE02107 ] |
No | Description détaillée | Fabricant |
NE02100 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ETC |
NE02100 | NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL |
NE02100 | NPN Silicon High Frequency Transistor | NEC |
NE02103 | NPN Silicon High Frequency Transistor | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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