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PDF NE32400 Data sheet ( Hoja de datos )
| Número de pieza | NE32400 | |
| Descripción | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP | |
| Fabricantes | NEC | |
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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32400, NE24200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg = 0.25 µm
• Gate Width : Wg = 200 µm
ORDERING INFORMATION
PART NUMBER
NE32400
NE24200
QUALITY GRADE
Standard (Grade D)
Grade C and B (B is special order)
APPLICATIONS
Commercial
Industrial, space
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS 4.0
Gate to Source Voltage
VGS –3.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot*
200
Channel Temperature
Tch 175
Storage Temperature
Tstg –65 to +175
* Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
Gate to Source Cutoff Voltage VGS(off)
Transconductance
gm
Thermal Resistance
Rth*
Noise Figure
NF
Associated Gain
Ga
MIN.
–
15
–0.2
45
–
–
10.0
TYP.
0.5
40
–0.8
60
–
0.6
11.0
MAX.
10
70
–2.0
–
260
0.7
–
UNIT
µA
mA
V
mS
˚C/W
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
channel to case
VDS = 2 V, ID = 10 mA, f = 12 GHz
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11345EJ2V0DS00 (2nd edition)
(Previous No. TD-2358)
Date Published May 1996 P
Printed in Japan
©
1996
1 page  
NE32400, NE24200
S-PARAMETERS MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
S11
MAG. ANG.
(MHz)
(deg.)
1000
0.996 –12
2000
0.994 –23
3000
0.979 –34
4000
0.963 –44
5000
0.929 –54
6000
0.904 –62
7000
0.882 –70
8000
0.851 –81
9000
0.836 –89
10000
0.809 –97
11000
0.792 –105
12000
0.774 –112
13000
0.762 –119
14000
0.745 –124
15000
0.729 –128
16000
0.717 –133
17000
0.697 –137
18000
0.685 –141
19000
0.665 –146
20000
0.647 –150
21000
0.625 –156
22000
0.612 –160
23000
0.596 –166
24000
0.592 –170
25000
0.587 –174
26000
0.584 –178
S21
MAG. ANG.
(deg.)
4.680 171
4.603 161
4.486 152
4.314 143
4.118 135
3.872 127
3.759 120
3.632 111
3.423 104
3.290
97
3.179
91
3.059
84
2.940
78
2.807
73
2.698
68
2.616
63
2.526
58
2.421
54
2.315
49
2.220
45
2.159
40
2.046
34
1.892
30
1.866
27
1.780
25
1.751
21
S12
MAG. ANG.
(deg.)
0.015 83
0.032 76
0.046 70
0.059 65
0.071 59
0.076 55
0.092 51
0.097 45
0.098 40
0.102 40
0.107 37
0.112 35
0.118 31
0.121 28
0.124 26
0.129 24
0.134 21
0.137 19
0.135 19
0.136 18
0.138 18
0.138 17
0.139 17
0.140 16
0.141 21
0.141 22
S22
MAG. ANG.
(deg.)
0.616 –10
0.613 –16
0.601 –23
0.592 –30
0.580 –36
0.578 –40
0.574 –46
0.557 –52
0.543 –55
0.529 –59
0.523 –62
0.511 –67
0.489 –72
0.479 –77
0.468 –81
0.464 –85
0.462 –90
0.460 –94
0.460 –96
0.460 –98
0.459 –100
0.457 –102
0.455 –103
0.455 –105
0.454 –107
0.453 –108
K MSG/MAG
0.05
0.07
0.08
0.10
0.18
0.28
0.30
0.35
0.40
0.42
0.44
0.45
0.46
0.49
0.51
0.54
0.58
0.63
0.68
0.70
0.71
0.72
0.73
0.74
0.74
0.75
(dB)
24.9
21.6
19.9
18.6
17.7
17.1
16.1
15.7
15.5
15.1
14.7
14.4
14.0
13.6
13.4
13.1
12.8
12.5
12.3
12.1
11.9
11.7
11.5
11.3
11.2
11.0
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE32400.PDF ] | |
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