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Número de pieza | DB-900-80W | |
Descripción | RF Power Amplifier Demoboard | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DB-900-80W (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DB-900-80W
80W / 26V / 869-894 MHz PA using 2x PD57045S
The LdmoST FAMILY
PRELIMINARY DATA
RF POWER AMPLIFIER DEMOBOARD USING
TWO N-CHANNEL ENHANCEMENT-MODE
LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 80 W min. with 13 dB gain over
869-894 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFIER
TYPICAL CDMA PERFORMANCE:
IS-95 CD MA / 9ch FWD
Pout = 14W
Gain = 13 dB
Nd = 22%
ACPR (750 KHz) : -45 dBc
ACPR (1.98 MHz) : -60 dBc
DESCRIPTION
The DB-900-80W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for IS-54/-136 & IS-95 base
station applications.
The DB-900-80W is designed in cooperation
with Europeenne de Telecomunications S.A.
(www.etsa.rf), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch
up to 10:1 all phases and with harmonics lower
than 30 dBc.
ORDER CODE
DB-900-80W
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC)
Symbol
Parameter
VDD Supply voltage
ID Drain Current
PDISS Power dissipation at Tcase = +85°C
TCASE Operating Case Temperature
Pamb
Max. Ambient Temperature
November, 20 2002
Value
32
9
135
-20 to +85
+55
Unit
V
A
W
oC
oC
1/6
1 page TEST CIRCUIT COMPONENT PART LIST
COMPONENT
T1, T2
C1, C2, C23, C24
C3, C4
C5, C6, C17, C18
C7, C8, C9, C10, C11, C12, C13, C14
C15, C16
C19, C20
C21, C22
C26, C27
C25
CV1, CV2
P1, P2
R1,R7
R2
R3, R4
R5, R6
D1, D2
SM1, SM2
BOARD
SUBSTRATE
BACK SIDE
CERAMIC CHIP CAPACITORS
DB-900-80W
DESCRIPTION
PD57045S TRANSISTOR
47pF - 500V CERAMIC CHIP CAPACITOR
4.7pF - 500V CERAMIC CHIP CAPACITOR
100pF - 500V CERAMIC CHIP CAPACITOR
10pF - 500V CERAMIC CHIP CAPACITOR
100nF - 63V CERAMIC CHIP CAPACITOR
1µF / 35V ELECTROLYTIC CAPACITOR
5.6pF - 500V CERAMIC CHIP CAPACITOR
6.8pF - 500V CERAMIC CHIP CAPACITOR
0.5pF - 500V CERAMIC CHIP CAPACITOR
ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V
10K Ohms MULTITURN POTENTIOMETER
100 Ohms 1/4W 1206 SMD CHIP RESISTOR
50 Ohms 30W - 4GHz LOAD
4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR
10K Ohms 1/4W 1206 SMD CHIP RESISTOR
ZENER DIODE 5V - 500 mW SOD80
90° SMD HYBRID COUPLER ANAREN Xinger 1304-3
METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ
TEFLON-GLASS Er = 2.55
COPPER FLANGE 2 mm THICKNESS
ATC100B or EQUIVALENT
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DB-900-80W.PDF ] |
Número de pieza | Descripción | Fabricantes |
DB-900-80W | RF Power Amplifier Demoboard | ST Microelectronics |
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