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Numéro de référence | NZT560A | ||
Description | NPN Low Saturation Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
July 1998
NZT560 / NZT560A
C
E
C
B
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
NZT560/NZT560A
VCEO
Collector-Emitter Voltage
60
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
80
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
NZT560/NZT560A
2
62.5
Units
W
°C/W
© 1998 Fairchild Semiconductor Corporation
nzt560.lwpPrNA 7/10/98 revC
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Pages | Pages 7 | ||
Télécharger | [ NZT560A ] |
No | Description détaillée | Fabricant |
NZT560 | NPN Low Saturation Transistor | Fairchild Semiconductor |
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