|
|
Numéro de référence | NZT651 | ||
Description | NPN Current Driver Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
Discrete POWER & Signal
Technologies
NZT651
C
SOT-223
E
C
B
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
80
5.0
4.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
*NZ T651
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
1.2
9.7
103
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
|
|||
Pages | Pages 4 | ||
Télécharger | [ NZT651 ] |
No | Description détaillée | Fabricant |
NZT651 | NPN Current Driver Transistor | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |