DataSheetWiki


OH10008 fiches techniques PDF

Panasonic Semiconductor - GaAs Hall Device

Numéro de référence OH10008
Description GaAs Hall Device
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





OH10008 fiche technique
GaAs Hall Devices
OH10008
GaAs Hall Device
Magnetic sensor
Unit : mm
I Features
Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
Input resistance: typ. 750 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
41
32
0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1
2.85 ± 0.25
5
5 0 to 0.15
I Applications
Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and
other portable equipment)
Automotive equipment
Measurement equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
VC 12
PD 100
Topr 30 to +125
Tstg 55 to +125
Unit
V
mW
°C
°C
0.5 ± 0.1
φ 1.0 ± 0.025
1 : VC Input (+) side
2 : VH Output (−) side
3 : VC Input (−) side
4 : VH Output (+) side
Mini Type Package (4-pin) with positioning projection
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter
Hall voltage*1
Unequilibrium ratio*2, 4
Input resistance
Output resistance
Temperature coefficient of hall voltage
Symbol
VH
VHO
RIN
ROUT
β
Temperature coefficient of input
resistance
α
Linearity of hall voltage*3
γ
Conditions
VC = 6 V, B = 0.1 T
VC = 6 V, B = 0 T
IC = 1 mA, B = 0 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T/0.5 T
Min Typ Max Unit
80 105 130 mV
±19 mV
0.5 0.75
k
1.5 5
k
0.06 %/°C
0.3 %/°C
2%
Note)
*1 : VH =
VH++VH
2
*2 : Output pin voltage under no-load (B = 0) condition
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
γ=
KH5KH1
1/2(KH1+KH5)
(the cumulative sensitivity KH =
*4 : VHO rank classification
VH
IC B
)
Class
VHO (mV)
A
+19 to +9
B
+12 to +2
C
+5 to 5
D
2 to 12
E
9 to 19
1

PagesPages 2
Télécharger [ OH10008 ]


Fiche technique recommandé

No Description détaillée Fabricant
OH10003 GaAs Hall Device Panasonic Semiconductor
Panasonic Semiconductor
OH10004 GaAs Hall Device Panasonic Semiconductor
Panasonic Semiconductor
OH10008 GaAs Hall Device Panasonic Semiconductor
Panasonic Semiconductor
OH10009 GaAs Hall Device Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche