DataSheetWiki


ON1003 fiches techniques PDF

Panasonic Semiconductor - Photo Interrupter

Numéro de référence ON1003
Description Photo Interrupter
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





ON1003 fiche technique
Transmissive Photosensors (Photo Interrupters)
ON1003
Photo Interrupter
For contactless SW, object detection
A
Unit : mm
Slit width
(0.3)
Outline
ON1003 is an ultraminiature, highly reliable transmittive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
Fast response : tr, tf = 35 µs (typ.)
Highly precise position detection : 0.15 mm
Gap width : 1.2 mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Soldering temperature
VR 6
IF 50
PD*1
75
IC 20
VCEO
35
VECO
6
PC*2
75
Topr –25 to +85
Tstg – 40 to +100
Tsol*3 260
V
mA
mW
mA
V
V
mW
˚C
˚C
˚C
A'
4.2
1.5 1.2 1.5
Device
center
(C0.3)
2-0.25
SEC. A-A'
4.2 (C0.5)
Gate the rest
0.3 max.
ø1.5
+0.1
–0
2-0.5
*3.2 *2.54
13
2
4
1
24
Pin connection
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
3
*1 Input power derating ratio is
1.0mW/˚C at Ta 25˚C.
*2 Output power derating ratio is
1.0mW/˚C at Ta 25˚C.
*3 Soldering time is within 5 seconds.
more than 1mm
Soldering bath
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
characteristics Reverse current (DC)
VF IF = 20mA
IR VR = 3V
Output characteristics Collector cutoff current
ICEO VCE = 20V
Collector current
IC VCE = 5V, IF = 5mA
Transfer
characteristics
Collector to emitter saturation voltage
VCE(sat) IF = 10mA, IC = 50µA
Response time
tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000
* Switching time measurement circuit
100
1.2 1.4 V
10 µA
100 nA
1300 µA
0.4 V
35 µs
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1

PagesPages 3
Télécharger [ ON1003 ]


Fiche technique recommandé

No Description détaillée Fabricant
ON1003 Photo Interrupter Panasonic Semiconductor
Panasonic Semiconductor
ON1004 Transmissive Photosensors Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche