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Fairchild Semiconductor - P-Channel Switch

Numéro de référence P1086
Description P-Channel Switch
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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P1086 fiche technique
P1086
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
DS G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
- 30
VGS Gate-Source Voltage
30
IGF Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
TO-92
Units
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVGSS
IGSS
ID(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
VDS = 0V, IG = 1µA
VGS = 15V
VDS = 15V
VGS = 12V
T = +85°C
IDGO
Drain-Gate Leakage Current
VDG = 15V
IS = 0
T = +85°C
IDSS
VGS(off)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
Zero-Gate Voltage Drain Current
Gate-Source Cutoff Voltage
Drain-Source On Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Time
Rise Time
Trun Off Time
Fall Time
VDS = 20V, VGS = 0V
VDS = 15V, ID = 1µA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 1mA
VGS = 0V, ID = 0, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 12V, f = 1MHz
VDD = -6V
VGS(off) = +12V
RL = 910
ID(on) = 6mA
Min. Typ. Max. Units
30 V
2 nA
10 nA
0.5 µA
2 NA
0.1 µA
10 mA
10 V
0.5 V
75
75
45 pF
10 pF
15 ns
20 ns
15 ns
50 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002

PagesPages 3
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