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Hamamatsu Corporation - CdS photoconductive cell

Numéro de référence P534
Description CdS photoconductive cell
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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P534 fiche technique
VISIBLE DETECTOR
CdS photoconductive cell
Metal package type
Hermetically sealed for high reliability
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l Variety of package size
l Highly resistant to moisture and dust
Applications
l Sensor for office machine
l Safety device for heating system and boiler
(flame monitor for oil burner)
l Night/day check sensor and sunlight sensor for air conditioner
l Alarm and safety sensor
I Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Absolute maximum ratings
Characteristics *
Type No.
Dimensional
outline
Supply
voltage
Power
dissipation
P
Ambient
temperature
Ta
Peak
sensitivity
wavelength
lp
Resistance *
10 lx, 2856 K 0 lx *!
g

 
*"
Response time 10 lx *#
Rise time Fall time
tr tf
Min. Max. Min.
(Vdc) (mW) (°C)
(nm) (kW) (kW) (MW) 100 to 10 lx (ms)
(ms)
5M type (TO-18)
P1114-01
P1114-04
100
30
-30 to +50
630
570
13 39
15 45
1
10
0.80
60
40
25
20
6M type (f5.5)
P930
150 50 -30 to +70 560 7 23 0.5 0.68 60
90
8M type (TO-5)
P201B
P201D
P368
P380
200
100
-30 to +50
-30 to +60
50 -30 to +50
560
520
620
21 63
20 60
14 43
4.4 13
20
10
20
0.85
0.90
0.85
25
30
35
20
10
20
P467
P534
100
100 -30 to +60
-30 to +80
520
560
8 24
1.3 3.7
5
0.05
0.90
0.55
50
70
20
100
12M type (TO-8)
P621
P3872
150
400
300 -30 to +60
570
540
1.3 3.7
5 15
0.3
1.0
0.75
0.80
80
40
40
30
*1: All characteristics are measured after exposure to light (100 to 500  lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after removal of light of 10  lx.
*4: Typical gamma characteristics (within  ±0.10 variations) between 100lx to 10lx
γ
100
10
=
log (R100) - log (R10)
log (E100) - log (E10)
E, E: illuminance 100lx, 10lx
R, R: resistance at 100lx and 10lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance
when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance
level to 37 %.
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