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PDF SE1000W Data sheet ( Hoja de datos )
| Número de pieza | SE1000W | |
| Descripción | LightChargerTM155 Mb/s Transimpedance Amplifier Final | |
| Fabricantes | SiGe Semiconductor Inc. | |
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SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-3 fibre optic modules and line termination
§ ATM and FDDI optical receivers
Features
§ Single +5 V power supply
§ Input noise current = 12 nA rms when used with a
0.5 pF detector
§ Transimpedance gain = 15 kΩ into a 50 Ω load
(single -ended)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ 50 Ω single-ended or 100 Ω differential wire bond
selectable outputs
§ Bandwidth (-3 dB) = 150 MHz (min)
§ Wide data rate range = 10 Mb/s to 155 Mb/s
§ High input bias level = 2 V
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+95°C
§ Equivalent to Nortel Networks AB52
Ordering Information
Type
SE1000W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1000W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features single-ended or
differential outputs, selectable by wire bond options,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. For differential outputs, a
decoupling capacitor on the supply is the only
external circuitry required.
Noise performance is optimized for 155 Mb/s
operation, with a calculated rms noise based
sensitivity of –41 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.95 A/W, with an infinite extinction
ratio source.
SE1000
TzAmp
155 Mb/s
Automatic Gain Control
Integrator Rectifier
TZ_IN
Input
Current
Rf
Tz Amp
Bandgap
Reference
GND or –ve supply
40-DST-01 § Rev 1.5 § May 24/02
Output
Driver
50 Ω
50 Ω
Power
Supply
Rejection
50 Ω
OUTP
OUTN
ACGND
Wire bond option for single-ended operation
1 of 9
1 page  
SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
AC Electrical Characteristics
Symbol
Parameter
Min Typ Max
BW (3dB) Small Signal Bandwidth at –3dB point
150
Tz
Single-ended Transimpedance (50 Ω on output,
11
15
20
f = 50 MHz)
Dri Input Data Rate
10 155
Voutmax Maximum Differential Output Voltage
300
Flf Low Frequency Cut-off
5
PSRR
Power Supply Rejection Ratio (single-ended or
differential) up to 100 kHz
40
lOL
Input Current before overload (155 Mb/s NRZ
data)
2600
Pol Optical Overload
+1.4
Nrms
Input Noise Current (in 100 MHz)
12 15
DC and AC electrical characteristics are specified under the following conditions :
Supply Voltage (VCC).........................................4.7 V to 5.3 V
Junction Temperature (Tj)..................................–40°C to 95°C
Load Resistor (RL)...............................................50 Ω AC coupled via 220 nF (single-ended)
Photodetector Capacitance (Cd).......................0.5 pF
Input bond wire inductance................................1 nH
Photodetector responsivity.................................0.95 A/W
Transimpedance (Tz) measured with 1 µA mean photocurrent
Unit
MHz
kΩ
Mb/s
mV pk-pk
kHz
dB
µA pk-pk
dBm
nA rms
40-DST-01 § Rev 1.5 § May 24/02
5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SE1000W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SE1000W | LightChargerTM155 Mb/s Transimpedance Amplifier Final | SiGe Semiconductor Inc. |
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