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Intel - 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY

Numéro de référence 28F008SA-L
Description 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY
Fabricant Intel 
Logo Intel 





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28F008SA-L fiche technique
28F008SA-L
8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY
Y High-Density Symmetrically-Blocked
Architecture
Sixteen 64-Kbyte Blocks
Y Low-Voltage Operation
b3 3V g0 3V or 5 0V g10% VCC
Y Extended Cycling Capability
10 000 Block Erase Cycles
160 000 Block Erase
Cycles per Chip
Y Automated Byte Write and Block Erase
Command User Interface
Status Register
Y System Performance Enhancements
RY BY Status Output
Erase Suspend Capability
Y High-Performance Read
200 ns Maximum Access Time
Y Deep Power-Down Mode
0 20 mA ICC Typical
Y SRAM-Compatible Write Interface
Y Hardware Data Protection Feature
Erase Write Lockout during Power
Transitions
Y Industry Standard Packaging
40-Lead TSOP 44-Lead PSOP
Y ETOXTM III Nonvolatile Flash
Technology
12V Byte Write Block Erase
Intel’s 28F008SA-L 8 Mbit FlashFileTM Memory is the highest density nonvolatile read write solution for solid-
state storage The 28F008SA-L’s extended cycling symmetrically-blocked architecture fast access time write
automation and very low power consumption provide a more reliable lower power lighter weight and higher
performance alternative to traditional rotating disk technology The 28F008SA-L brings new capabilities to
portable computing Application and operating system software stored in resident flash memory arrays provide
instant-on rapid execute-in-place and protection from obsolescence through in-system software updates
Resident software also extends system battery life and increases reliability by reducing disk drive accesses
For high-density data acquisition applications the 28F008SA-L offers a more cost-effective and reliable alter-
native to SRAM and battery Traditional high-density embedded applications such as telecommunications
can take advantage of the 28F008SA-L’s nonvolatility blocking and minimal system code requirements for
flexible firmware and modular software designs
The 28F008SA-L is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages Pin assign-
ments simplify board layout when integrating multiple devices in a flash memory array or subsystem This
device uses an integrated Command User Interface and state machine for simplified block erasure and byte
write The 28F008SA-L memory map consists of 16 separately erasable 64-Kbyte blocks
Intel’s 28F008SA-L employs advanced CMOS circuitry for systems requiring low power consumption and
noise immunity Its 200 ns access time provides superior performance when compared with magnetic storage
media A deep power-down mode lowers power consumption to 0 66 mW typical thru VCC crucial in portable
computing handheld instrumentation and other low-power applications The RP power control input also
provides absolute data protection during system power-up down
Manufactured on Intel’s 0 8 micron ETOX process the 28F008SA-L provides the highest levels of quality
reliability and cost-effectiveness
Other brands and names are property of their respective owners
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
December 1995
Order Number 290435-005

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