DataSheetWiki


D313 fiches techniques PDF

Unisonic Technologies - NPN Epitaxial Planar Transistor

Numéro de référence D313
Description NPN Epitaxial Planar Transistor
Fabricant Unisonic Technologies 
Logo Unisonic Technologies 





1 Page

No Preview Available !





D313 fiche technique
UTC D313
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC D313 is designed for use in general purpose
amplifier and switching applications.
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Storage Temperature
Junction Temperature
TSTG
Tj
VALUE
60
60
5
3
-55 ~ +150
150
UNIT
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO
IC=1mA
Collector-Emitter Breakdown Voltage BVCEO
IC=10mA
Emitter-Base Breakdown Voltage
BVEBO
IE=100uA
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
Collector-Emitter Saturation Voltage VCE(SAT)
IC=2A, IB=0.2A
Base-Emitter On voltage
VBE(ON)
VCE=2V, IC=1A
DC Current Gain
hFE IC=1A, VCE=2V
IC=0.1A,VCE=2V
MIN TYP MAX UNIT
60 V
60 V
5V
0.1 mA
1.0 mA
1.0 V
1.5 V
40 320
40
CLASSIFICATION ON hFE
RANK
C
RANGE
40-80
D
60-120
E
100-200
F
160-320
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R203-001,A

PagesPages 3
Télécharger [ D313 ]


Fiche technique recommandé

No Description détaillée Fabricant
D310F Fixed Inductors TOKO
TOKO
D312C Fixed Inductors TOKO
TOKO
D312F Fixed Inductors TOKO
TOKO
D313 NPN Epitaxial Planar Transistor Unisonic Technologies
Unisonic Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche