|
|
Numéro de référence | BBY40 | ||
Description | SILICON PLANAR VARIABLE CAPACITANCE DIODE | ||
Fabricant | Zetexs | ||
Logo | |||
1 Page
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAIL
BBY40 – S2
BBY40
2
1
3
3 SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
VBR
28.0
V IR = 10µA
Reverse current
IR
10 nA VR = 28V
1.0 µA VR = 28V, Tamb = 60°C
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Capacitance Ratio
Series Resistance
Cd
Cd / Cd
rd
26.0
4.3
5.0
0.4
32.0
6.0
6.5
0.6
pF
pF
Ω
VR = 3V, f=1MHz
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
f=200MHz at the value
of VR at which
Cd=25pF
Spice parameter data is available upon request for this device
|
|||
Pages | Pages 2 | ||
Télécharger | [ BBY40 ] |
No | Description détaillée | Fabricant |
BBY40 | VHF variable capacitance diode | Philipss |
BBY40 | SILICON PLANAR VARIABLE CAPACITANCE DIODE | Zetexs |
BBY42 | VHF variable capacitance diode | Philipss |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |