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PDF DIM1200ESM33-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM1200ESM33-A000 | |
| Descripción | Single Switch IGBT Module Preliminary Information | |
| Fabricantes | Dynex | |
| Logotipo |  |
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DIM1200ESM33-A000
Replaces August 2001, version DS5492-1.1
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
DIM1200ESM33-A000
Single Switch IGBT Module
Preliminary Information
DS5492-2.0 October 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.2V
1200A
2400A
Aux C
External connection
C1 C2
C3
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM1200ESM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM1200ESM33-A000
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
t Fall time
f
EOFF Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
EON Turn-on energy loss
Q Gate charge
g
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
t Fall time
f
EOFF Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
E Turn-on energy loss
ON
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
DIM1200ESM33-A000
Test Conditions
IC = 1200A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) = 1.5Ω
L = 100nH
Cge = 220nF
IF = 1200A, VR = 1800V,
dI /dt
F
=
5600A/µs
Min. Typ. Max. Units
- 1800 -
ns
- 250 - ns
- 1450 - mJ
- 500 - ns
- 300 - ns
- 1600 - mJ
- 36 - µC
- 650 - µC
- 1000 -
A
- 750 - mJ
Test Conditions
IC = 1200A
V
GE
=
±15V
VCE = 1800V
R
G(ON)
=
R
G(OFF)
=
1.5Ω
L ~ 100nH
Cge = 220nF
IF = 1200A, VR = 1800V,
dIF/dt = 4500A/µs
Min. Typ. Max. Units
- 2000 -
ns
- 300 - ns
- 1650 -
mJ
- 550 - ns
- 300 - ns
- 2200 -
mJ
- 1000 -
µC
- 1050 -
A
- 1250 -
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM1200ESM33-A000.PDF ] | |
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