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PDF SPI-335-34 Data sheet ( Hoja de datos )
| Número de pieza | SPI-335-34 | |
| Descripción | Ultraminiature photoreflector (single-transistor type) | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN6029
SPI-335-34
Infrared LED
SPI-335-34
Ultraminiature photoreflector
(single-transistor type)
Features
• Infrared LED plus Phototransistor (single)
• DIP type
• Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm
• Visible light cut type
• Lead length : (L=3.5mm)
Absolute Maximum Ratings at Ta=25°C, 65%RH
Parameter
Symbol
Rating
Forward Current
IF 50
Input LED
Reverse Voltage
Power Dissipation
VR 5
PD 70
Output
Phototransistor
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
VCEO
VECO
IC
20
5
20
Power Dissipation
Operating Temperature
PC 70
Topr --20 to +80
Storage Temperature
Tstg --40 to +100
Soldering Temperature *1
Tsol 260
*1 Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower case edge.
Unit
mA
V
mW
V
V
mA
mW
°C
°C
°C
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Condition
Input
Output
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Leakage Current
VF
IR
ICEO
IC
ILEAK
IF=10mA
VR=5V
IF=0mA, VCE=10V
IF=4mA,VCE=5V*1
IF=10mA,VCE=5V*2
Coupled Collector Emitter
Saturation Voltage
VCE(sat) IF=10mA, IC=50µA
Rise Time
Fall Time
*1 Location of reflector is show in Fig. 1.
*2 No reflector
tr
tf
VCC=5V, RL=100Ω
IC=1mA
*3 Table of Classification of Collector Output
Class
Ic (µA)
EF
180 to 110 140 to 80
G
100 to 50
H
65 to 33
Marking color Orange
Green
White
Silver
Min. Typ. Max. Unit
1.0 1.2 1.6
V
-- -- 10 µA
-- 10 200 nA
33 -- 180 µA
-- -- 1 µA
-- -- 0.5 V
-- 5 -- µs
-- 5 -- µs
AL V.E. film
Glass plate (t : 1mm)
Fig. 1 Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6029 1/6
1 page  
SPI-335-34
Typical Characteristics
CAUTION
These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.24
IF=10mA
IC=50µA
0.22
0.20
0.18
0.16
Collector Dark Current vs. Ambient Temperature
10-6
5 VCE=10V
10-7
5
10-8
5
10-9
5
0.14
--25
0 25 50 75
Ambient Temperature Ta (°C)
100
Response Time vs. Load Resistance
1000
500 IFP=20mA
VCC=5V
Ta=25°C
100
tf
tr
50
10
5
10-10
--25
0 25 50 75
Ambient Temperature Ta (°C)
100
Test Circuit for Response Time
IFP
RD
VCC
Vout
RL
IFP
tr
Vout
tf
90%
10%
1
0.1 0.5 1
5 10
50 100
Load Resistance RL (kΩ)
Relative Collector Current vs. Distance
120
IF=10mA
100
VCE=5V
Ta=25°C
80
d
60
40
20
0
01 2 34 5
Distance between sensor and Ar evaporation d (mm)
Relative Collector Current vs.
PPC paper Moving Distance
120
IF=10mA,VCE=5V
100 r2 Ta=25°C,d=1mm
0
80 – +
60
40 r1
20
r1
–
0
+
0
--4 --2
0
24
PPC paper Moving Distance r (mm)
6
No.6029 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SPI-335-34.PDF ] | |
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