|
|
Numéro de référence | H9012 | ||
Description | PNP Silicon Transistor | ||
Fabricant | Shantou Huashan | ||
Logo | |||
1 Page
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H9012
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………-40V
VCEO——Collector-Emitter Voltage……………………………-20V
1―Emitter,E
2―Base,B
3―Collector,C
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
DataSheeMt4iUn .comTyp
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
78
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-600
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-40
-20
-5
Max Unit
-100 nA
-100 nA
246
-600
-1.2
-730
mV
V
mV
V
V
V
Test Conditions
DataShee
VCB=-25V, IE=0
VEB=-3V, IC=0
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA,IC=0
█ hFE Classification
E
78—112
F
96—135
G
112—166
H
144—202
I
176—246
DataSheet4U.com
DataSheet4 U .com
|
|||
Pages | Pages 2 | ||
Télécharger | [ H9012 ] |
No | Description détaillée | Fabricant |
H9012 | PNP Silicon Transistor | Shantou Huashan |
H9013 | NPN Silicon Transistor | Shantou Huashan Electronic |
H9018 | NPN Silicon Transistor | Shantou Huashan |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |