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ST Microelectronics - P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

Numéro de référence STP12PF06
Description P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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STP12PF06 fiche technique
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STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STP12PF06
STF12PF06
60 V
60 V
< 0.20
< 0.20
TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
ID
12 A
12 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
PART NUMBER
STP12PF06
STF12PF06
MARKING
P12PF06
F12PF06
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
March 2005
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
STP20PF06
12
8.4
48
60
0.4
Value
60
60
± 20
6
200
STF20PF06
8
5.6
32
225
0.17
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 12A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD= 25V
Rev. 2.0
1/10

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