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Hamamatsu - Photomultiplier Tubes

Numéro de référence R7057
Description Photomultiplier Tubes
Fabricant Hamamatsu 
Logo Hamamatsu 





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R7057 fiche technique
PHOTOMULTIPLIER TUBE
R7057
Fast Time Response, For High Energy Physics and
Scintillation Counting (Especially for BaF2 Scintillator)
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Base
Suitable Socket
Description/Value
160 to 650
420
Bialkali
25
Synthetic sillica
Linear focused
10
14-pin glass base
E678-14C (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Ambient Temperature
Value
2000
350
0.2
-80 to +50
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856K)
Cathode Sensitivity
Radiant at 420nm
Blue (CS-5-58 filter)
Anode Sensitivity
Luminous (2856K)
Radiant at 420nm
Gain
Anode Dark Current (after 30 min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
Pulse Linearity (at ±2 % deviation)
Min.
60
NOTE: Anode characteristics are measured with the voltage distribution ratio A shown below.
( ): Pulse linearity is measured with the voltage distribution ratio B shown below.
Typ.
95
88
11.0
190
1.8 × 105
2 × 106
4
1.7
16
500
10 (100)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K
Ratio A
Ratio B (Tapered)
Capacitors (µF)
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
6 1 1.5 1 1 1 1 1 1 1 1
6 1 1.5 1 1 1 1.2 1.5 2 3.3 3
0.01 0.02 0.02 0.04 0.06
Supply Voltage: 1500 V dc, K: Cathode, Dy: Dynode, P: Anode
Max.
80
Unit
nm
nm
mm dia.
Unit
Vdc
Vdc
mA
°C
Unit
µA/lm
mA/W
µA/lm-b
A/lm
A/W
nA
ns
ns
ps
mA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K

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