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PDF FZ1200R33KL2 Data sheet ( Hoja de datos )
| Número de pieza | FZ1200R33KL2 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Eupec | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tj = 25°C
Tj = -25°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80°C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Spitzenverlustleistung der Diode
maximum power dissipation diode
Tj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD £ 10 pC (acc. to IEC 1287)
vorläufiges Datenblatt
preliminary datasheet
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
PRQM
VISOL
VISOL
3300
3300
1200
2300
2400
14,7
+/- 20V
1200
2400
440.000
1.500
6.000
2.600
V
A
A
A
kW
V
A
A
A2s
kW
V
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, VGE = 15V, Tvj = 25°C
IC = 1200A, VGE = 15V, Tvj = 125°C
IC = 120 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Gateladung
gate charge
VGE = -15V ... + 15V, VCE = 1800V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 3300V, VGE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
3,00
3,70
max.
3,65
4,45
VGE(th)
4,2
5,1
6,0
V
V
V
Cies - 145 - nF
Cres
-
8
- nF
QG - 22 - µC
ICES
-
-
5 mA
IGES
-
- 400 nA
prepared by: J. Biermann
approved by: Christoh Lübke; 2002-04-30
date of publication : 2002-04-23
revision: 3
1 (9)
FZ1200R33KL2_V Rev3.xls
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
2400
vorläufiges Datenblatt
preliminary datasheet
IC = f (VGE)
VCE = 20V
2000
T = 25°C
T = 125°C
1600
1200
800
400
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
2400
2000
Tj = 25°C
Tj = 125°C
1600
1200
800
400
0
0,0 0,5 1,0 1,5 2,0 2,5
VF [V]
IF = f (VF)
3,0 3,5 4,0
5 (9)
FZ1200R33KL2_V Rev3.xls
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FZ1200R33KL2.PDF ] | |
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