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Numéro de référence | STD15NF10 | ||
Description | N-CHANNEL POWER MOSFET | ||
Fabricant | ST Microelectronics | ||
Logo | |||
1 Page
® STD15NF10
N - CHANNEL 100V - 0.073Ω - 15A TO-252
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on )
ID
STD15NF10
100 V < 0.08 Ω
15 A
s TYPICAL RDS(on) = 0.073 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VG S
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( 2) starting Tj = 25 oC, ID =24A , VDD = 50V
April 2000
Va l u e
Unit
100 V
100 V
± 20
V
15 A
10 A
60 A
45 W
0.3 W/oC
9 V/ns
75 mJ
-65 to 175
oC
175 oC
(1) ISD ≤ 80 A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA
1/6
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Pages | Pages 6 | ||
Télécharger | [ STD15NF10 ] |
No | Description détaillée | Fabricant |
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