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STD110NH02L fiches techniques PDF

ST Microelectronics - N-CHANNEL POWER MOSFET

Numéro de référence STD110NH02L
Description N-CHANNEL POWER MOSFET
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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STD110NH02L fiche technique
STD110NH02L
N-CHANNEL 24V - 0.0044 - 80A DPAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD110NH02L
24 V < 0.005 80 A(2)
s TYPICAL RDS(on) = 0.0044 @ 10 V
s TYPICAL RDS(on) = 0.0056 @ 5 V
s RDS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD110NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(2) Drain Current (continuous) at TC = 25°C
ID(2) Drain Current (continuous) at TC = 100°C
IDM(3)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
September 2003
Value
30
24
24
± 20
80
80
320
125
0.83
900
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
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