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STD10NF06L fiches techniques PDF

ST Microelectronics - N-CHANNEL POWER MOSFET

Numéro de référence STD10NF06L
Description N-CHANNEL POWER MOSFET
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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STD10NF06L fiche technique
STD10NF06L
N-CHANNEL 60V - 0.1- 10A DPAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD10NF06L
60V <0.1210A
s TYPICAL RDS(on) = 0.1
s SURFACE-MOUNTING DPAK (TO-252) POWER
PACKAGE IN TAPE & REEL (SUFFIX “T4”)
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFETprocess has specifically been de-
signed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC con-
verters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID
IDM (l)
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
60
60
± 15
10
7
40
30
0.2
30
50
– 55 to 175
(1) ISD 10A, di/dt 400A/µs, VDD =48V, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 7A, VDD=20 V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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