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Número de pieza | 2SC5993 | |
Descripción | For power amplification For TV VM circuit | |
Fabricantes | Panasonic Semiconductor | |
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Hay una vista previa y un enlace de descarga de 2SC5993 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SC5993
Silicon NPN epitaxial planar type
For power amplification
For TV VM circuit
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
180
180
6
1.5
3
20
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
IC = 10 mA, IB = 0
VCB = 180 V, IE = 0
VEB = 6 V, IC = 0
VCE = 5 V, IC = 0.1 A
IC = 1 A, IB = 0.1 A
VCE = 10 V, IC = 0.2 A, f = 10 MHz
VCB = 10 V, IE = 0, f = 1 MHz
180 V
100 µA
100 µA
60 240
0.5 V
130 MHz
10 pF
Turn-on time
Storage time
Fall time
ton IC = 0.4 A, Resistance loaded
tstg IB1 = 0.04 A, IB2 = − 0.04 A
tf VCC = 100 V
0.1 µs
1.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
60 to 140
120 to 240
Publication date: July 2004
SJD00320AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SC5993.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5991 | DC / DC Converter Applications | Sanyo Semicon Device |
2SC5993 | For power amplification For TV VM circuit | Panasonic Semiconductor |
2SC5994 | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications | Sanyo Semicon Device |
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