|
|
Numéro de référence | IGD01N120H2 | ||
Description | HighSpeed 2-Technology | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
IGP01N120H2,
IGD01N120H2
IGB01N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IGP01N120H2 1200V 1A 0.09mJ 150°C P-TO-220-3-1
Q67040-S4593
IGB01N120H2 1200V 1A 0.09mJ 150°C P-TO-263 (D2PAK) Q67040-S4592
IGD01N120H2 1200V 1A 0.09mJ 150°C P-TO-252 (DPAK) Q67040-S4591
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
Unit
V
A
±20 V
28 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04
|
|||
Pages | Pages 13 | ||
Télécharger | [ IGD01N120H2 ] |
No | Description détaillée | Fabricant |
IGD01N120H2 | HighSpeed 2-Technology | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |