|
|
PDF VEC2901 Data sheet ( Hoja de datos )
| Número de pieza | VEC2901 | |
| Descripción | Switching Flash Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de VEC2901 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Ordering number : ENN8198
VEC2901
VEC2901
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Switching, Flash Applications
Features
• Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
• Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (900mm2!0.8mm) 1unit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Ratings
100
50
6
5
8
1.1
150
--55 to +150
30
±10
150
600
0.25
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Marking : AA
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1.6A, IB=53mA
IC=2A, IB=40mA
Ratings
min typ max
Unit
100 nA
100 nA
250 400
330 MHz
26 pF
55 110 mV
75 150 mV
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001130 No.8198-1/6
1 page  
VEC2901
RDS(on) -- ID
[FET]
RDS(on) -- ID
[FET]
10 100
VGS=2.5V
7
VGS=1.5V
75
5 Ta=75°C
25°C
--25°C
3
2
3
2
10 Ta=75°C
7
5 --25°C
25°C
3
2
1.0
0.01
7
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00033
RDS(on) -- Ta
[FET]
6
5
4
3
I DI=D4=0m80Am, AV,GVSG=2S.=54V.0V
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
IF -- VSD
[FET]
5
VGS=0
3
2
0.1
7
5
3
2
1.0
0.001
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 0.01
Drain Current, ID -- A
yfs -- ID
23
IT00034
[FET]
VDS=10V
Ta= --25°C
75°C
25°C
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00036
SW Time -- ID
[FET]
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
0.01
0.5
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT00037
Ciss, Coss, Crss -- VDS [FET]
f=1MHz
10
7 Ciss
5 Coss
3 Crss
2
1.0
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT00039
10
0.01
2
10
VDS=10V
9 ID=150mA
8
3 57
Drain Current, ID -- A
VGS -- Qg
0.1
2
IT00038
[FET]
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
No.8198-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VEC2901.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| VEC2901 | Switching Flash Applications | Sanyo Semicon Device |
| VEC2904 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
| VEC2905 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |