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PDF DE375-501N21A Data sheet ( Hoja de datos )
| Número de pieza | DE375-501N21A | |
| Descripción | RF Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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DE375-501N21A
RF Power MOSFET
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Symbol Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
500 V
500 V
VDSS = 500 V
ID25 = 25 A
RDS(on) = 0.22 Ω
PDC = 940 W
VGS
VGSM
Continuous
Transient
±20 V
±30 V
ID25 Tc = 25°C
IDM Tc = 25°C, pulse width limited by TJM
25 A
150 A
IAR
EAR
dv/dt
PDC
PDHS
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 3.7W/°C above 25°C
21 A
30 mJ
5 V/ns
>200 V/ns
940 W
425
GATE
W
DRAIN
PDAMB
Tc = 25°C
4.5 W
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.16 C/W
0.36 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2.5 5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.22 Ω
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
gfs VDS = 15 V, ID = 0.5ID25, pulse test
17 S Advantages
TJ
-55
+175 °C
• Optimized for RF and high speed
switching at frequencies to 50MHz
TJM
175
°C • Easy to mount—no insulators needed
Tstg
-55
+175 °C
• High power density
TL 1.6mm (0.063 in) from case for 10 s
300 °C
Weight
3g
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DE375-501N21A.PDF ] | |
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