|
|
PDF K3296 Data sheet ( Hoja de datos )
| Número de pieza | K3296 | |
| Descripción | MOSFET ( Transistor ) - 2SK3296 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3296 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)
• Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
2SK3296-ZK
2SK3296-ZJ
TO-262
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C) PT1
Total Power Dissipation (TC = 25°C) PT2
20
±20
±35
±140
1.5
40
Channel Temperature
Storage Temperature
Tch 150
Tstg −55 to +150
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14063EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999, 2000
1 page  
www.DataSheet4U.com
2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RD(S@(onV) LGiSm=ite1IdD0V(D)C)
ID(pulse)
100
300 s
PW =
s
10µs
Power Dissipa1ti0om3nmsL1smimsited
TC = 25°C
1 Single Pulse
0.1
1
DC
10
VDS - Drain to Source Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 3.13˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D14063EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3296.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3294 | MOSFET ( Transistor ) - 2SK3294 | NEC |
| K3296 | MOSFET ( Transistor ) - 2SK3296 | NEC |
| K3298 | MOSFET ( Transistor ) - 2SK3298 | NEC |
| K3299 | MOSFET ( Transistor ) - 2SK3299 | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |