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Semelab - Metal Gate RF Silicon FET

Numéro de référence D2025UK
Description Metal Gate RF Silicon FET
Fabricant Semelab 
Logo Semelab 





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D2025UK fiche technique
MECHANICAL DATA
C
12
4
A
3
B
PIN 1
PIN 3
DRAIN
GATE
D
DW
PIN 2
PIN 4
SOURCE
SOURCE
DIM mm
A 26.16
B 5.72
C 45°
D 7.11
E 0.13
F 1.52
G 0.43
H 7.67
Tol.
0.38
0.13
0.13
0.03
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.055
0.060
0.120
Tol.
0.015
0.005
0.005
0.001
0.005
0.008
REF
TetraFET
D2025UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
17.5W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
1A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 5855
Issue 1

PagesPages 2
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