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Numéro de référence | KRA306E | ||
Description | (KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRA301E
4.7
4.7
KRA302E
10
10
KRA303E
22
22
KRA304E
47
47
KRA305E
2.2
47
KRA306E
4.7
47
KRA301E~KRA306E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A 1.60+_ 0.10
B 0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
ESM
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRA301Eᴕ306E
KRA301E
KRA302E
Input Voltage
KRA303E
KRA304E
KRA305E
KRA306E
Output Current
Power Dissipation
Junction Temperature
KRA301Eᴕ306E
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
-50
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
-100
100
150
-55ᴕ150
UNIT
V
V
mA
mW
ᴱ
ᴱ
MARK SPEC
TYPE KRA301E
MARK
PA
KRA302E
PB
KRA303E
PC
KRA304E
PD
KRA305E
PE
KRA306E
PF
Marking
Type Name
1999. 6. 8
Revision No : 0
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRA306E ] |
No | Description détaillée | Fabricant |
KRA306 | (KRA301 - KRA306) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA306E | (KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA306V | (KRA301V - KRA306V) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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