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PDF PUA3117 Data sheet ( Hoja de datos )
| Número de pieza | PUA3117 | |
| Descripción | Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching
■ Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• NPN 3 elements
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
80
60
6
3
6
1
15
2.4
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
20.2±0.3
Unit: mm
4.0±0.2
0.8±0.25
0.5±0.15
1.0±0.25
2.54±0.2
0.5±0.15
C 1.5±0.5
7 × 2.57 = 17.78±0.25
1: Emitter
2: Base
12345678
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0
60
V
Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 0.5 A
500 2 500
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.05 A
1.0 V
Transition frequency
fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
50 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Internal Connection
35
246
1
7
8
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJK00007AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PUA3117.PDF ] | |
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